| No. |
Part Name |
Description |
Manufacturer |
| 301 |
HER206 |
2.0A, 600V ultra fast recovery rectifier |
MCC |
| 302 |
HER206 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 303 |
HER206-T3 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 304 |
HER206-TB |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 305 |
HER206G |
2.0A, 600V ultra fast recovery rectifier |
MCC |
| 306 |
HER207 |
HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts, Forward Current - 2.0Amperes |
Chenyi Electronics |
| 307 |
HER207 |
2.0A, 800V ultra fast recovery rectifier |
MCC |
| 308 |
HER207 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 309 |
HER207-T3 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 310 |
HER207-TB |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 311 |
HER208 |
HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts, Forward Current - 2.0Amperes |
Chenyi Electronics |
| 312 |
HER208 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 313 |
HER208-T3 |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 314 |
HER208-TB |
2.0A HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 315 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 316 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 317 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 318 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 319 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 320 |
IRF710 |
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 321 |
IRF710 |
2.0A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET |
Intersil |
| 322 |
IRF821FI |
N-channel MOSFET, 450V, 2.0A |
SGS Thomson Microelectronics |
| 323 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 324 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
| 325 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 326 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
| 327 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) |
International Rectifier |
| 328 |
KBJ2A |
2.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 329 |
KBJ2B |
2.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 330 |
KBJ2D |
2.0A BRIDGE RECTIFIER |
Won-Top Electronics |
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