| No. |
Part Name |
Description |
Manufacturer |
| 301 |
IRF423 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 302 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 303 |
IRF610 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A |
Siliconix |
| 304 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 305 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 306 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 307 |
IRF720F1 |
N-channel MOSFET, 400V, 2.5A |
SGS Thomson Microelectronics |
| 308 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
| 309 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 310 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 311 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 312 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
| 313 |
IRF820 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 314 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 315 |
IRF820 |
2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 316 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 317 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 318 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
| 319 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
| 320 |
IRFF320 |
2.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 321 |
IRFF320 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 322 |
IRFF321 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
| 323 |
IRFF430 |
Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 324 |
IRFF9110 |
Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 325 |
IRFF9112 |
Trans MOSFET P-CH 100V 2.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 326 |
IRFF9220 |
2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 327 |
IRFF9220 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 2.5A |
Siliconix |
| 328 |
IRFF9221 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 329 |
IRFIBC30 |
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A) |
International Rectifier |
| 330 |
IRFR420 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
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