| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MAX6432EIUS-T |
3.5 V, Low-power, single/dual-level battery monitor with hysteresis |
MAXIM - Dallas Semiconductor |
| 302 |
MD-169PIN |
1 MHz-3.5 GHz, termination insensitive mixer |
MA-Com |
| 303 |
MDC-169SMA |
1 MHz-3.5 GHz, termination insensitive mixer |
MA-Com |
| 304 |
MDS-169 |
1 MHz-3.5 GHz, termination insensitive mixer |
MA-Com |
| 305 |
MDS-169 |
Termination Insensitive Mixer, 1 MHz - 3.5 GHz |
Tyco Electronics |
| 306 |
MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 307 |
MHW903 |
3.5 W 890 to 915 MHz RF POWER AMPLIFIERS |
Motorola |
| 308 |
MHW953 |
3.5 W 890 to 915 MHz RF POWER AMPLIFIERS |
Motorola |
| 309 |
MHW954 |
3.5 W 890 to 915 MHz RF POWER AMPLIFIERS |
Motorola |
| 310 |
MMM5062 |
Quad-Band GSM GPRS 3.5 V Power Amplifier |
Freescale (Motorola) |
| 311 |
MMM5062 |
MMM5062 Technical Data Sheet: Quad-Band GSM GPRS 3.5 V Power Amplifier |
Motorola |
| 312 |
MMM5063 |
Tri-Band GSM GPRS 3.5 V Power Amplifier |
Freescale (Motorola) |
| 313 |
MMM5063 |
MMM5063 Advance Information Data Sheet: Tri-Band GSM GPRS 3.5 V Power Amplifier |
Motorola |
| 314 |
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT |
Motorola |
| 315 |
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 316 |
MRFG35005MT1 |
MRFG35005MT1 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 317 |
MRFG35010 |
MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 318 |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT |
Motorola |
| 319 |
MTD2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
Motorola |
| 320 |
MTP2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
Motorola |
| 321 |
N4691B |
N4691B 2-port MW Electronic Calibration Module, 3.5 mm |
Agilent (Hewlett-Packard) |
| 322 |
N4901B |
Serial BERT 13.5 Gbps |
Agilent (Hewlett-Packard) |
| 323 |
NCS2004 |
Operational Amplifier, Rail-to-Rail, 3.5 MHz, Wide Supply |
ON Semiconductor |
| 324 |
NDL4105-78 |
3.5 mW, 2 V, 150 mA, light emitting diode |
NEC |
| 325 |
NDL4105-88 |
3.5 mW, 2 V, 150 mA, light emitting diode |
NEC |
| 326 |
NDL4105A |
3.5 mW, 2 V, 150 mA, light emitting diode |
NEC |
| 327 |
NDL7911PC493 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1549.32 nm. Frequency 193.5 THz. |
NEC |
| 328 |
NDL7911PD493 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1549.32 nm. Frequency 193.5 THz. |
NEC |
| 329 |
NDL7912PC493 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1549.32 nm. Frequency 193.5 THz. |
NEC |
| 330 |
NDL7912PD493 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1549.32 nm. Frequency 193.5 THz. |
NEC |
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