| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BC338 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 302 |
BC338 |
Silicon NPN Epitaxial Planar AF Transistors |
IPRS Baneasa |
| 303 |
BC338 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 304 |
BC338 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 305 |
BC338 |
Low frequency transistor |
mble |
| 306 |
BC338 |
Low frequency transistor |
mble |
| 307 |
BC338 |
Low frequency transistor |
mble |
| 308 |
BC338 |
NPN SILICON AF MEDIUM POWER TRANSISTORS |
Micro Electronics |
| 309 |
BC338 |
Amplifier Transistor |
Motorola |
| 310 |
BC338 |
Silicon n-p-n medium power transistor |
Mullard |
| 311 |
BC338 |
N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 312 |
BC338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 313 |
BC338 |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 314 |
BC338 |
Transistor NPN |
Siemens |
| 315 |
BC338 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 316 |
BC338 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 317 |
BC338 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
| 318 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 319 |
BC338 |
Small Signal Transistors (NPN) |
Vishay |
| 320 |
BC338-16 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 321 |
BC338-16 |
Small Signal Transistor (NPN) |
General Semiconductor |
| 322 |
BC338-16 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 323 |
BC338-16 |
Low frequency transistor |
mble |
| 324 |
BC338-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 325 |
BC338-16 |
Amplifier Transistor |
Motorola |
| 326 |
BC338-16 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 327 |
BC338-16 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 328 |
BC338-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 329 |
BC338-16 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 330 |
BC338-16 |
Transistors, RF & AF |
Vishay |
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