No. |
Part Name |
Description |
Manufacturer |
301 |
2N5415 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
302 |
2N5415 |
Silicon PNP Power Transistor, TO-5 package, NPN Complement 2N3440 |
Silicon Transistor Corporation |
303 |
2N5415 |
SILICON PNP TRANSISTORS |
ST Microelectronics |
304 |
2N5415/B |
Trans GP BJT PNP 200V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
305 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
306 |
2N5415S |
PNP Transistor |
Microsemi |
307 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
308 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
ST Microelectronics |
309 |
2N5415U4 |
PNP Transistor |
Microsemi |
310 |
2N5415UA |
PNP Transistor |
Microsemi |
311 |
2N6415 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
312 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
313 |
2SA1415 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
314 |
2SB415 |
Audio Frequency Transistor |
TOSHIBA |
315 |
2SB415 |
Low Frequency Medium Power Transistor |
TOSHIBA |
316 |
2SB415 |
Germanium PNP alloy junction transistor, medium power amplifier applications |
TOSHIBA |
317 |
2SC2415 |
SILICON NPN TRIPLE DIFFUSED MESA |
Panasonic |
318 |
2SC3415S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
319 |
2SC4150 |
Silicon NPN Power Transistors ITO-220 package |
Savantic |
320 |
2SC4150 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
321 |
2SC4151 |
Silicon NPN Power Transistors ITO-220 package |
Savantic |
322 |
2SC4151 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
323 |
2SC4152 |
Power Device - Power Transistors - Swicthing |
Panasonic |
324 |
2SC4153 |
Silicon NPN Transistor |
Sanken |
325 |
2SC4153 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
326 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
327 |
2SC4155 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
328 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
329 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
330 |
2SC4156 |
High-Voltage Amp, High-Voltage Switching Applications |
SANYO |
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