| No. |
Part Name |
Description |
Manufacturer |
| 301 |
SST25VF020-20-4C-SAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 302 |
SST25VF020-20-4E-QA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 303 |
SST25VF020-20-4E-QAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 304 |
SST25VF020-20-4E-SA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 305 |
SST25VF020-20-4E-SAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 306 |
SST25VF020-20-4I-QA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 307 |
SST25VF020-20-4I-QAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 308 |
SST25VF020-20-4I-SA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 309 |
SST25VF020-20-4I-SAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 310 |
SST25VF040-20-4C-QA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 311 |
SST25VF040-20-4C-QAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 312 |
SST25VF040-20-4C-S2A |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 313 |
SST25VF040-20-4C-S2AE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 314 |
SST25VF040-20-4E-QA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 315 |
SST25VF040-20-4E-QAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 316 |
SST25VF040-20-4E-S2A |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 317 |
SST25VF040-20-4E-S2AE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 318 |
SST25VF040-20-4I-QA |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 319 |
SST25VF040-20-4I-QAE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 320 |
SST25VF040-20-4I-S2A |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 321 |
SST25VF040-20-4I-S2AE |
20MHz; V(ds): -0.5 to +0.5V; 1W; 4Mbit SPI flash |
Silicon Storage Technology |
| 322 |
TC58FVM6B2AFT65 |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 323 |
TC58FVM6B2AXB65 |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 324 |
TC58FVM6T2AFT65 |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 325 |
TC58FVM6T2AXB65 |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 326 |
V54C365404VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4 |
Mosel Vitelic Corp |
| 327 |
V54C365404VDL |
3.3V ultra high performance 16M x 4 SDRAM 4 banks x 4Mbit x 4 |
Mosel Vitelic Corp |
| 328 |
V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4 |
Mosel Vitelic Corp |
| 329 |
V58C365164SAT36 |
64Mbit DDR SDRAM 4M x 16, 3.3V |
Mosel Vitelic Corp |
| 330 |
V58C365164SAT4 |
64Mbit DDR SDRAM 4M x 16, 3.3V |
Mosel Vitelic Corp |
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