No. |
Part Name |
Description |
Manufacturer |
301 |
NX8570SC557-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1555.747 nm. Frequency 192.70 THz. SC-PC connector. |
NEC |
302 |
NX8571SC315-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. FC-PC connector. |
NEC |
303 |
NX8571SC315-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.507 nm. Frequency 195.75 THz. SC-PC connector. |
NEC |
304 |
NX8571SC318-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. FC-PC connector. |
NEC |
305 |
NX8571SC318-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. SC-PC connector. |
NEC |
306 |
NX8571SC457-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. FC-PC connector. |
NEC |
307 |
NX8571SC457-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. SC-PC connector. |
NEC |
308 |
NX8571SC557-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1555.747 nm. Frequency 192.70 THz. FC-PC connector. |
NEC |
309 |
NX8571SC557-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1555.747 nm. Frequency 192.70 THz. SC-PC connector. |
NEC |
310 |
PBSS301PZ |
12 V, 5.7 A PNP low VCEsat (BISS) transistor |
Nexperia |
311 |
PBSS301PZ |
12 V, 5.7 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
312 |
PBSS4032SN |
30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor |
Nexperia |
313 |
PBSS4032SN |
30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor |
NXP Semiconductors |
314 |
PBSS4032SPN |
30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor |
Nexperia |
315 |
PBSS4032SPN |
30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
316 |
PBSS4041PZ |
60 V, 5.7 A PNP low VCEsat (BISS) transistor |
Nexperia |
317 |
PBSS4041PZ |
60 V, 5.7 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
318 |
PMN27UP |
20 V, 5.7 A P-channel Trench MOSFET |
Nexperia |
319 |
PMN27UP |
20 V, 5.7 A P-channel Trench MOSFET |
NXP Semiconductors |
320 |
PSMN017-60YS |
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET |
Nexperia |
321 |
PSMN017-60YS |
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET |
NXP Semiconductors |
322 |
PSMN5R8-40YS |
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET |
Nexperia |
323 |
PSMN5R8-40YS |
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET |
NXP Semiconductors |
324 |
PT4403 |
3.4V to 5.7V 75-W, 48 V-Input DC/DC Converter |
Texas Instruments |
325 |
PT4403A |
3.4V to 5.7V 75-W, 48 V-Input DC/DC Converter |
Texas Instruments |
326 |
PT4403N |
3.4V to 5.7V 75-W, 48 V-Input DC/DC Converter |
Texas Instruments |
327 |
QPA1017D |
5.7 - 7.0 GHz 50 Watt GaN Power Amplifier |
Qorvo |
328 |
QPM1017 |
5.7 - 7.0 GHz 100 Watt GaN Power Amplifier Module |
Qorvo |
329 |
R1120N571A-TL |
Low noise 150mA LDO regulator. Output voltage 5.7V. L active type. Taping specification TL. |
Ricoh |
330 |
R1120N571B-TL |
Low noise 150mA LDO regulator. Output voltage 5.7V. H active type. Taping specification TL. |
Ricoh |
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