No. |
Part Name |
Description |
Manufacturer |
301 |
FL-518 |
1550 nm LASER DIODES |
etc |
302 |
FL-518S |
1550 nm LASER DIODES |
etc |
303 |
FP100F |
10000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
304 |
FP125F |
12500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
305 |
FP150F |
15000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
306 |
FP175F |
17500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
307 |
FP200F |
20000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
308 |
FQI3N25 |
250 N-Channel MOSFET |
Fairchild Semiconductor |
309 |
GBM-9000F |
5V / 850 nm / 2.125 Gb/s Multi-Mode Gigabit Interface Converter (GBIC) |
etc |
310 |
GBM-9100F |
5V / 850 nm / 2.125 Gb/s Multi-Mode Gigabit Interface Converter (GBIC) |
etc |
311 |
HYB3116400BJ-50 |
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM |
Infineon |
312 |
HYB3116400BT-50 |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns |
Infineon |
313 |
HYB3116400BTL-50 |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns |
Infineon |
314 |
HYB3116405BJ-50 |
4M x 4 Bit 4k 3.3 V 50 ns EDO DRAM |
Infineon |
315 |
HYB3116405BT-50 |
4M x 4 Bit EDO DRAM 3.3 V 4k 50 ns |
Infineon |
316 |
HYB3116405BTL-50 |
4M x 4 Bit EDO DRAM 3.3 V 4k 50 ns |
Infineon |
317 |
HYB3117400BJ-50 |
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM |
Infineon |
318 |
HYB3117405BJ-50 |
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM |
Infineon |
319 |
HYB3117405BT-50 |
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns |
Infineon |
320 |
HYB3117800BSJ-50 |
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM |
Infineon |
321 |
HYB3117805BSJ-50 |
2M x 8 Bit 2k 3.3 V 50 ns EDO DRAM |
Infineon |
322 |
HYB3118160BSJ-50 |
1M x 16 Bit 1k 3.3 V 50 ns FPM DRAM |
Infineon |
323 |
HYB3118165BSJ-50 |
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM |
Infineon |
324 |
HYB3118165BST-50 |
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM |
Infineon |
325 |
HYB314100BJ-50 |
4M x 1 Bit FPM DRAM 3.3 V 50 ns |
Infineon |
326 |
HYB314171BJ-50 |
256k x 16 Bit FPM DRAM 3.3 V 50 ns |
Infineon |
327 |
HYB314175BJ-50 |
256k x 16 Bit EDO DRAM 3.3 V 50 ns |
Infineon |
328 |
HYB314400BJ-50 |
1M x 4 Bit FPM DRAM 3.3 V 50 ns |
Infineon |
329 |
HYB314405BJ-50 |
1M x 4 Bit EDO DRAM 3.3 V 50 ns |
Infineon |
330 |
HYB5116400BJ-50 |
4M x 4 Bit 4k 5 V 50 ns FPM DRAM |
Infineon |
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