| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BU7266FVM-TR |
Low Power Input-Output Full Swing Operational Amplifier |
ROHM |
| 302 |
BU7486FV |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
| 303 |
BU7486FV-E2 |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
| 304 |
BU7486FVM |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
| 305 |
BU7486FVM-TR |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
| 306 |
BU8766FV |
Communications LSIs > Melody sound source LSI for cellular phone |
ROHM |
| 307 |
CY62136FV30LL-45BVXI |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 308 |
CY62136FV30LL-45BVXIT |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 309 |
CY62136FV30LL-45ZSXA |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 310 |
CY62136FV30LL-45ZSXAT |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 311 |
CY62136FV30LL-45ZSXI |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 312 |
CY62136FV30LL-45ZSXIT |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 313 |
CY62136FV30LL-55ZSXE |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 314 |
CY62136FV30LL-55ZSXET |
2-Mbit (128 K � 16) Static RAM |
Cypress |
| 315 |
DF3A3.6FV |
ESD protection diode (standard type) |
TOSHIBA |
| 316 |
DF3A5.6FV |
ESD protection diode (standard type) |
TOSHIBA |
| 317 |
DSP56156FV40 |
16-bit Digital Signal Processor |
Motorola |
| 318 |
DSP56156FV60 |
16-bit Digital Signal Processor |
Motorola |
| 319 |
KDZ36FV |
Zener Diode |
Korea Electronics (KEC) |
| 320 |
KDZ5.6FV |
Zener Diode Silicon Epitaxial Planar Diode |
Korea Electronics (KEC) |
| 321 |
KM736FV4021 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
| 322 |
KM736FV4021H-5 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
| 323 |
KM736FV4021H-6 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
| 324 |
KM736FV4021H-7 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
| 325 |
LP62S16256FV-55LLI |
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 326 |
LP62S16256FV-55LLT |
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 327 |
LP62S16256FV-70LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 328 |
LP62S16256FV-70LLT |
256K X 16 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 329 |
SMJ4256FV |
262/144-BIT DYNAMIC RANDOM-ACCESS MEMORY |
Texas Instruments |
| 330 |
SSM3J16FV |
Small-signal MOSFET |
TOSHIBA |
| | | |
