| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N91A |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 302 |
1N92 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 303 |
1N93 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 304 |
1N94 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 305 |
1N95 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 306 |
1N97 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 307 |
1N982 |
Diode Zener Single 75V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 308 |
1N982A |
Diode Zener Single 75V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 309 |
1N982B |
Diode Zener Single 75V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 310 |
1N982C |
Diode Zener Single 75V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 311 |
1N982D |
Diode Zener Single 75V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 312 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 313 |
2N3583 |
Trans GP BJT NPN 175V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 314 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 315 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 316 |
2N3637 |
Trans GP BJT PNP 175V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 317 |
2N3638 |
Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 318 |
2N3691 |
Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 319 |
2N3879 |
Trans GP BJT NPN 75V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 320 |
2N5039 |
20A NPN Silicon Power Metal Transistor 75V 140W |
Motorola |
| 321 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 322 |
2N5320 |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 323 |
2N5320A |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 324 |
2N5322 |
Trans GP BJT PNP 75V 2A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 325 |
2N5324 |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 326 |
2N5325 |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 327 |
2N6077 |
Trans GP BJT NPN 275V 7A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 328 |
2N6234 |
Trans GP BJT NPN 275V 5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 329 |
2N6250 |
Trans GP BJT NPN 275V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 330 |
2N6420 |
Trans GP BJT PNP 175V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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