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Datasheets for 9.0

Datasheets found :: 1052
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
302 IRF230 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
303 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
304 IRF231 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
305 IRF232 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
306 IRF233 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
307 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
308 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
309 IRG4BC20KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) International Rectifier
310 IRG4BC20KS INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) International Rectifier
311 IRGBC20 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) International Rectifier
312 IRUK3055CQ01 Chipset - Complete Power Management Solution for VRM9.0 specification for CPU power. International Rectifier
313 IRUK3055CQ01TR POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS International Rectifier
314 ISL6560 PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg �0.8%, 1.1-1.85 Voltage, VRM 9.0 Intersil
315 KB-B100SRW 19.05mmx3.81mm LED LIGHT BAR Kingbright Electronic
316 KB2685EW 8.89mmx19.05mm LED LIGHT BAR Kingbright Electronic
317 KR-1100AAU Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica SANYO
318 LC9.0 Transient Voltage Suppressor Microsemi
319 LC9.0A Transient Voltage Suppressor Microsemi
320 LC9.0A Diode TVS Single Uni-Dir 9V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
321 LCE9.0 LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
322 LCE9.0 LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR General Semiconductor
323 LCE9.0 Transient Voltage Suppressor Microsemi
324 LCE9.0 Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
325 LCE9.0/TR13 Standard Unidirectional and Bidirectional TVS Microsemi
326 LCE9.0A LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR EIC discrete Semiconductors
327 LCE9.0A LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR General Semiconductor
328 LCE9.0A TRANSIENT VOLTAGE SUPPRESSORS Micro Commercial Components
329 LCE9.0A Transient Voltage Suppressor Microsemi
330 LCE9.0A Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay


Datasheets found :: 1052
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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