No. |
Part Name |
Description |
Manufacturer |
301 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
302 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
303 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
304 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
305 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
306 |
IRF233 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
307 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
308 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
309 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
310 |
IRG4BC20KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
311 |
IRGBC20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
International Rectifier |
312 |
IRUK3055CQ01 |
Chipset - Complete Power Management Solution for VRM9.0 specification for CPU power. |
International Rectifier |
313 |
IRUK3055CQ01TR |
POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS |
International Rectifier |
314 |
ISL6560 |
PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg �0.8%, 1.1-1.85 Voltage, VRM 9.0 |
Intersil |
315 |
KB-B100SRW |
19.05mmx3.81mm LED LIGHT BAR |
Kingbright Electronic |
316 |
KB2685EW |
8.89mmx19.05mm LED LIGHT BAR |
Kingbright Electronic |
317 |
KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica |
SANYO |
318 |
LC9.0 |
Transient Voltage Suppressor |
Microsemi |
319 |
LC9.0A |
Transient Voltage Suppressor |
Microsemi |
320 |
LC9.0A |
Diode TVS Single Uni-Dir 9V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
321 |
LCE9.0 |
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
322 |
LCE9.0 |
LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
323 |
LCE9.0 |
Transient Voltage Suppressor |
Microsemi |
324 |
LCE9.0 |
Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W |
Vishay |
325 |
LCE9.0/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
326 |
LCE9.0A |
LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
327 |
LCE9.0A |
LOW CAPACITANCE TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
328 |
LCE9.0A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
329 |
LCE9.0A |
Transient Voltage Suppressor |
Microsemi |
330 |
LCE9.0A |
Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W |
Vishay |
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