No. |
Part Name |
Description |
Manufacturer |
301 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
302 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
303 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
304 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
305 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
306 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
307 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
308 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
309 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
310 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
311 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
312 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
313 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
314 |
K4R441869B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
315 |
K4R441869B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
316 |
K4R441869B-N(M)CK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
317 |
K7A401809B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
318 |
K7A403209B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
319 |
K7A403609B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
320 |
K7A801809B-QC25 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
321 |
K7A801809B-QCI25 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
322 |
K7A803609B-QC25 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
323 |
K7N401809B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAM |
Samsung Electronic |
324 |
K7N401809B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAMTM |
Samsung Electronic |
325 |
K7N403609B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAMTM |
Samsung Electronic |
326 |
K7N403609B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAM |
Samsung Electronic |
327 |
K7N801809B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
328 |
K7N801849B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
329 |
K7N803609B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
330 |
K7N803649B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
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