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Datasheets for ANNEL MOSFET

Datasheets found :: 342
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No. Part Name Description Manufacturer
301 PSMN3R9-100YSF NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package Nexperia
302 PSMN6R9-100YSF NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package Nexperia
303 PSMN8R5-100ESF NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package Nexperia
304 PSMN8R5-100PSF NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package Nexperia
305 PSMN8R7-100YSF NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package Nexperia
306 Q62702-F1020 Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) Siemens
307 Q62702-F1021 Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Siemens
308 Q62702-F1055 Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) Siemens
309 Q62702-F1129 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
310 Q62702-F1132 Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) Siemens
311 Q62702-F1177 Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) Siemens
312 Q62702-F1487 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
313 Q62702-F1498 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
314 Q62702-F1586 Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) Siemens
315 Q62702-F1587 SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
316 Q62702-F1613 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
317 Q62702-F1627 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
318 Q62702-F1628 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
319 Q62702-F1665 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
320 Q62702-F1771 Silicon N Channel MOSFET Tetrode Siemens
321 Q62702-F1772 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
322 Q62702-F1773 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
323 Q62702-F1774 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
324 Q62702-F1775 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
325 Q62702-F1776 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
326 Q62702-F35 SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) Siemens
327 Q62702-F936 Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) Siemens
328 RFY220 N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. SemeLAB
329 SFT1305 P-Channel MOSFET for General Purpose Switching Applications ON Semiconductor
330 SF_2N6786 N-Channel MOSFET in a Hermetically sealed TO39 Metal Package SemeLAB


Datasheets found :: 342
Page: | 7 | 8 | 9 | 10 | 11 | 12 |



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