| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MB8266A |
MOS 65536 Bit DRAM |
Fujitsu Microelectronics |
| 302 |
MB82BDR08163A-70L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 303 |
MB82D01181E-60L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 304 |
MB82DBS02183C-70L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 305 |
MB82DBS04183C-70L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 306 |
MB82DP02183C-65L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 307 |
MB82DP04183C-65L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 308 |
MB82DS01181E-70L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 309 |
MBRB820 |
8.0A, 20V ultra fast recovery rectifier |
MCC |
| 310 |
MBRB820 |
Schott ky Barrier Rectifier 20 to 100 Volts 8.0 Am p |
Micro Commercial Components |
| 311 |
MURB820 |
200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 312 |
MURB820-1 |
200V 8A HEXFRED Discrete Diode in a TO-262 package |
International Rectifier |
| 313 |
MURB820TRL |
200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 314 |
MURB820TRR |
200V 8A HEXFRED Discrete Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 315 |
MURHB820CT |
8 Amp Super Fast Recovery Rectifier 50 to 600 Volts |
Micro Commercial Components |
| 316 |
NGB8202N |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 317 |
NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 318 |
NGB8204N |
Ignition IGBT, 18 A, 400 V, N-Channel D2PAK |
ON Semiconductor |
| 319 |
NGB8206N |
Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK |
ON Semiconductor |
| 320 |
NGB8207AN |
Ignition IGBT, N-Channel, 20 A, 365 V, D2PAK |
ON Semiconductor |
| 321 |
NGB8207N |
Ignition IGBT, N-Channel, 20 A, 365 V, D2PAK |
ON Semiconductor |
| 322 |
NGB8245N |
Ignition IGBT, N-Channel, 20 A, 450 V, D2PAK |
ON Semiconductor |
| 323 |
NX8562LB820-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. Anode ground. FC-PC connector. |
NEC |
| 324 |
NX8562LB828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. Anode ground. FC-PC connector. |
NEC |
| 325 |
NX8563LB820-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. FC-PC connector. Anode ground. |
NEC |
| 326 |
NX8563LB828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode ground. |
NEC |
| 327 |
OPB820 |
SLOTTED OPTICAL SWITCHES |
Optek Technology |
| 328 |
OPB820S10 |
SLOTTED OPTICAL SWITCHES |
Optek Technology |
| 329 |
OPB820S12 |
Slotted optical switch. |
Optek Technology |
| 330 |
OPB820S3 |
SLOTTED OPTICAL SWITCHES |
Optek Technology |
| | | |
