No. |
Part Name |
Description |
Manufacturer |
301 |
BAS125-06W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
302 |
BAS125-07 |
Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) |
Siemens |
303 |
BAS125-07W |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
304 |
BAS125W |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
Siemens |
305 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
306 |
BAT63-099R |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
Siemens |
307 |
BAT64 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
308 |
BAT64-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
309 |
BAT64-04W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
310 |
BAT64-05 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
311 |
BAT64-05W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
312 |
BAT64-06 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
313 |
BAT64-06W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
314 |
BAT64-07 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
315 |
BAT64-07W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
316 |
BAT64-W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
317 |
BAT64W |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
318 |
BB101C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
319 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
320 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
321 |
BB101M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
322 |
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
323 |
BB102C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
324 |
BB102M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
325 |
BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
326 |
BB301 |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
327 |
BB301C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
328 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
329 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
330 |
BB301M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
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