| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1SV249 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 302 |
1SV250 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 303 |
1SV251 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 304 |
1SV263 |
Pin Diode for VHF, UHF, AGC Applications |
SANYO |
| 305 |
1SV264 |
Pin Diode for VHF, UHF, AGC Applications |
SANYO |
| 306 |
1SV265 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 307 |
1SV266 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 308 |
1SV267 |
PIN Diode for VHF, UHF, AGC Applications |
SANYO |
| 309 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 310 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 311 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 312 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 313 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 314 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 315 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 316 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 317 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 318 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 319 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 320 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 321 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 322 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 323 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 324 |
2SC2333 |
PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance) |
NEC |
| 325 |
2SC4871 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 326 |
2SC5245 |
NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 327 |
2SC5275 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 328 |
2SC5276 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 329 |
2SC5277 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 330 |
2SC5534 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
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