| No. |
Part Name |
Description |
Manufacturer |
| 301 |
K4E641612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 302 |
K4E660812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 303 |
K4E660812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 304 |
K4E660812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 305 |
K4E660812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 306 |
K4E661612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 307 |
K4F640811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 308 |
K4F640811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 309 |
K4F660811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 310 |
K4F660811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 311 |
KBPC6005 |
Diode Rectifier Bridge Single 50V 8A 4-Pin Case KBPC-6 |
New Jersey Semiconductor |
| 312 |
KBPC601 |
Diode Rectifier Bridge Single 100V 8A 4-Pin Case KBPC-6 |
New Jersey Semiconductor |
| 313 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 314 |
LCDA15C-6 |
Low Capacitance TVS Diode Array for MultiMode Transceiver Protection |
Semtech |
| 315 |
LCDA15C-6TB |
Low Capacitance TVS Diode Array For Multi-mode Transciever Protection |
Semtech |
| 316 |
LCDA15C-6TE |
Low Capacitance TVS Diode Array For Multi-mode Transciever Protection |
Semtech |
| 317 |
LTC-637D1P |
COMMON CATHODE |
Lite-On Technology Corporation |
| 318 |
MASW6010G |
DC-6 GHz GaAs SPDT switch |
MA-Com |
| 319 |
MASW6010G |
GaAs SPDT Switch DC-6 GHz |
Tyco Electronics |
| 320 |
MASW6020G |
DC-6 GHz GaAs SPDT switch |
MA-Com |
| 321 |
MASW6020G |
GaAs SPST Switch DC-6 GHz |
Tyco Electronics |
| 322 |
MB81F643242C-60 |
4 x 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM |
Fujitsu Microelectronics |
| 323 |
MB81F643242C-60FN |
4 x 512K x 32 bit synchronous dynamic RAM |
Fujitsu Microelectronics |
| 324 |
MB81F643242C-60FN-S |
4 x 512K x 32 bit synchronous dynamic RAM |
Fujitsu Microelectronics |
| 325 |
MB82DP02183C-65L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 326 |
MB82DP04183C-65L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
| 327 |
MC-4R128CEE6C-653 |
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
NEC |
| 328 |
MC-4R128CPE6C-653 |
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT |
NEC |
| 329 |
MC-4R192CPE6C-653 |
Direct Rambus DRAM RIMM Module 192M-BYTE 96M-WORD x 16-BIT |
NEC |
| 330 |
MC-4R256CEE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT |
NEC |
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