| No. |
Part Name |
Description |
Manufacturer |
| 301 |
KM68257CLTG-20 |
32Kx8 bit high speed static RAM (5V operating), 20ns |
Samsung Electronic |
| 302 |
KM684000CLT-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 303 |
KM684000CLT-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 304 |
KM684000CLTI-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 305 |
KM684000CLTI-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 306 |
KSA733CLTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 307 |
KSC945CLTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 308 |
LBAT54CLT1 |
Dual Series Schottky Barrier Diodes |
Leshan Radio Company |
| 309 |
MCLT6010 |
Current Limited Temperature compensated voltage reference diodes |
Motorola |
| 310 |
MCLT6025 |
Current Limited Temperature compensated voltage reference diodes |
Motorola |
| 311 |
MCLT6050 |
Current Limited Temperature compensated voltage reference diodes |
Motorola |
| 312 |
MCLT6100 |
Current Limited Temperature compensated voltage reference diodes |
Motorola |
| 313 |
MGB15N35CLT4 |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 314 |
MGB15N40CLT4 |
Ignition IGBT 15 Amps, 410 Volts |
ON Semiconductor |
| 315 |
MGB19N35CLT4 |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 316 |
MLD1N06CLT4 |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level |
ON Semiconductor |
| 317 |
MLD1N06CLT4G |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level |
ON Semiconductor |
| 318 |
MLD2N06CLT4 |
Voltage Clamped MOSFET |
ON Semiconductor |
| 319 |
MMBZ27VCLT1 |
40 Watt Peak Power Zener Transient Voltage Suppressors |
ON Semiconductor |
| 320 |
NGB15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 321 |
NGD15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 322 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 323 |
NID9N05CLT4G |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 324 |
NIF9N05CLT1 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
| 325 |
NIF9N05CLT3 |
Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, Clamped MOSFET w/ESD Protection |
ON Semiconductor |
| 326 |
PCLT-2A |
Dual current limited overvoltage protected digital termination |
ST Microelectronics |
| 327 |
PCLT-2AT4 |
Dual current limited overvoltage protected digital termination |
ST Microelectronics |
| 328 |
PCLT-2AT4-TR |
Dual current limited overvoltage protected digital termination |
ST Microelectronics |
| 329 |
SCLT3-8BT8 |
Protected digital input termination with serialized state transfer |
ST Microelectronics |
| 330 |
SCLT3-8BT8-TR |
Protected digital input termination with serialized state transfer |
ST Microelectronics |
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