| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 302 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 303 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 304 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 305 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 306 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 307 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 308 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 309 |
MAX20-150.0C |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 310 |
MAX20-150.0CA |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 311 |
MAX40-100.0C |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 312 |
MAX40-100.0CA |
100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 313 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 314 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 315 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 316 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 317 |
MAX40-140.0C |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 318 |
MAX40-140.0CA |
140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 319 |
MAX40-150.0C |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 320 |
MAX40-150.0CA |
150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 321 |
MPSW01 |
One Watt High Current Transistors |
Motorola |
| 322 |
MPSW01-D |
One Watt High Current Transistors NPN Silicon |
ON Semiconductor |
| 323 |
MPSW01A |
One Watt High Current Transistors |
Motorola |
| 324 |
MPSW51 |
ne Watt High Current Transistors |
Motorola |
| 325 |
MPSW51 |
One Watt High Current Transistors |
ON Semiconductor |
| 326 |
MPSW51-D |
One Watt High Current Transistors PNP Silicon |
ON Semiconductor |
| 327 |
MPSW51A |
ne Watt High Current Transistors |
Motorola |
| 328 |
MPSW51A |
One Watt High Current Transistors |
ON Semiconductor |
| 329 |
MPSW51ARLRA |
One Watt High Current Transistors |
ON Semiconductor |
| 330 |
MPSW51ARLRP |
One Watt High Current Transistors |
ON Semiconductor |
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