| No. |
Part Name |
Description |
Manufacturer |
| 301 |
APPLICATION-NOTE |
1.2V, 40-900 MHz Broadband amplifier with the TP3400 transistor |
TRW |
| 302 |
B331G |
Hearing aid amplifier with dynamic compresion, possibly equivalent WC501G |
RFT |
| 303 |
BA7252S |
Switchless Video signal Playback/Record Amplifier |
ROHM |
| 304 |
BA7655 |
Dual Voltage-controlled Amplifier |
ROHM |
| 305 |
BA7655A |
Dual Voltage-controlled Amplifier |
ROHM |
| 306 |
BA7655AF |
Dual Voltage-controlled Amplifier |
ROHM |
| 307 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 308 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 309 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 310 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 311 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 312 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 313 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 314 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 315 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 316 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 317 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 318 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 319 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 320 |
BC327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 321 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 322 |
BC328 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 323 |
BC328 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 324 |
BC337 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 325 |
BC337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 326 |
BC338 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 327 |
BC338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 328 |
BC635 |
Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
| 329 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 330 |
BC637 |
Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. |
USHA India LTD |
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