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Datasheets for D AMPLIFIE

Datasheets found :: 1984
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
302 BC238 Switching and Amplifier Applications Fairchild Semiconductor
303 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
304 BC239 Switching and Amplifier Applications Fairchild Semiconductor
305 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
306 BC307 Switching and Amplifier Applications Fairchild Semiconductor
307 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
308 BC308 Switching and Amplifier Applications Fairchild Semiconductor
309 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
310 BC309 Switching and Amplifier Applications Fairchild Semiconductor
311 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
312 BC327 Switching and Amplifier Applications Fairchild Semiconductor
313 BC327 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech
314 BC327 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. USHA India LTD
315 BC328 Switching and Amplifier Applications Fairchild Semiconductor
316 BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech
317 BC337 Switching and Amplifier Applications Fairchild Semiconductor
318 BC337 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech
319 BC338 Switching and Amplifier Applications Fairchild Semiconductor
320 BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech
321 BC635 Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
322 BC636 Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
323 BC637 Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
324 BC638 Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
325 BC640 Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
326 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
327 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
328 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
329 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
330 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD


Datasheets found :: 1984
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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