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Datasheets for D FO

Datasheets found :: 3844
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 2N2273 High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications Motorola
302 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
303 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
304 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
305 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
306 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
307 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
308 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
309 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
310 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
311 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
312 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
313 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
314 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
315 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
316 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
317 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
318 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
319 2N2802 Dual PNP silicon annular transistors designed for differential applications Motorola
320 2N2803 Dual PNP silicon annular transistors designed for differential applications Motorola
321 2N2804 Dual PNP silicon annular transistors designed for differential applications Motorola
322 2N2805 Dual PNP silicon annular transistors designed for differential applications Motorola
323 2N2806 Dual PNP silicon annular transistors designed for differential applications Motorola
324 2N2807 Dual PNP silicon annular transistors designed for differential applications Motorola
325 2N2845 NPN silicon annular transistor designed for switching applications Motorola
326 2N2846 NPN silicon annular transistor designed for switching applications Motorola
327 2N2847 NPN silicon annular transistor designed for switching applications Motorola
328 2N2848 NPN silicon annular transistor designed for switching applications Motorola
329 2N2857 NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers Motorola
330 2N2857 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz SGS-ATES


Datasheets found :: 3844
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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