No. |
Part Name |
Description |
Manufacturer |
301 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
302 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
303 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
304 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
305 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
306 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
307 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
308 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
309 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
310 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
311 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
312 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
313 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
314 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
315 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
316 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
317 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
318 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
319 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
320 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
321 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
322 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
323 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
324 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
325 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
326 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
327 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
328 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
329 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
330 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
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