No. |
Part Name |
Description |
Manufacturer |
301 |
K6X4016T3F-F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
302 |
K6X4016T3F-Q |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
303 |
K6X4016T3F-TB55 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
304 |
K6X4016T3F-TB70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
305 |
K6X4016T3F-TB85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
306 |
K6X4016T3F-TF55 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
307 |
K6X4016T3F-TF70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
308 |
K6X4016T3F-TF85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
309 |
K6X4016T3F-TQ70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
310 |
K6X4016T3F-TQ85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
311 |
K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
312 |
K6X8008C2B-B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
313 |
K6X8008C2B-F |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
314 |
K6X8008C2B-Q |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
315 |
K6X8008C2B-TB55 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
316 |
K6X8008C2B-TB70 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
317 |
K6X8008C2B-TF55 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
318 |
K6X8008C2B-TF70 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
319 |
K6X8008C2B-TQ55 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
320 |
K6X8008C2B-TQ70 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
321 |
KM616FS4110ZI-10 |
100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
322 |
KM616FS4110ZI-7 |
70ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
323 |
KM68U1000B |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
324 |
KM68U1000BL |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
325 |
KM68U1000BL/L-L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
326 |
KM68U1000BLE |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
327 |
KM68U1000BLE/LE-L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
328 |
KM68U1000BLG-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
329 |
KM68U1000BLG-10L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
330 |
KM68U1000BLGE-10 |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
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