| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N2475 |
Transistor, high speed saturated switches |
SGS-ATES |
| 302 |
2N2487 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 303 |
2N2488 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 304 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 305 |
2N2537 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 306 |
2N2538 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 307 |
2N2539 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 308 |
2N2540 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 309 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 310 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 311 |
2N2795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 312 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 313 |
2N2797 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 314 |
2N2798 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 315 |
2N2799 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 316 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 317 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 318 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 319 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 320 |
2N2894 |
HIGH SPEED SATURATED SWITCHES |
SGS Thomson Microelectronics |
| 321 |
2N2894 |
Transistor, high speed saturated switches |
SGS-ATES |
| 322 |
2N2894 |
HIGH-SPEED SATURATED SWITCHES |
ST Microelectronics |
| 323 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 324 |
2N2904 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 325 |
2N2904 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2218 NPN complementary |
Motorola |
| 326 |
2N2904 |
Transistor, high speed saturated switches |
SGS-ATES |
| 327 |
2N2904 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 328 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 329 |
2N2904A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 330 |
2N2904A |
Transistor, high speed saturated switches |
SGS-ATES |
| | | |
