| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MMBD1505 |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| 302 |
MMBD1505 |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 303 |
MMBD1505 |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 304 |
MMBD1505 |
High Conductance Low Leakage Diode |
National Semiconductor |
| 305 |
MMBD1505A |
Small Signal Diodes |
Fairchild Semiconductor |
| 306 |
MMBD1505A |
600mA, 180V ultra fast recovery rectifier |
MCC |
| 307 |
MMBD1505A |
High Conductance Low Leakage Diode 350mW |
Micro Commercial Components |
| 308 |
MMBD1505A |
High Conductance Low Leakage Diode |
National Semiconductor |
| 309 |
MMBD1505A |
Signal-Switching Diode |
Rectron Semiconductor |
| 310 |
MMBD1505A_D87Z |
High Conductance Low Leakage Diode |
Fairchild Semiconductor |
| 311 |
MRD150 |
40 Volt MICRO-T Photo Transistor NPN Silicon 50 milliwatts |
Motorola |
| 312 |
MXD1005C_D150 |
5-tap silicon delay line |
MAXIM - Dallas Semiconductor |
| 313 |
MXD1005PD150 |
5-tap silicon delay line |
MAXIM - Dallas Semiconductor |
| 314 |
MXD1013C_D150 |
3-in-1 silicon delay line. Output delay 150ns. |
MAXIM - Dallas Semiconductor |
| 315 |
MXD1013PD150 |
3-in-1 silicon delay line. Output delay 150ns. |
MAXIM - Dallas Semiconductor |
| 316 |
MZD150 |
1 to 3 watt zener regulator diode |
Motorola |
| 317 |
PD150 |
TO-18 TYPE COLOR SENSOR |
SHARP |
| 318 |
RD150E |
500 mW DHD ZENER DIODE DO-35 |
NEC |
| 319 |
RD150E-T1 |
500 mW constant-voltage diode |
NEC |
| 320 |
RD150E-T2 |
500 mW constant-voltage diode |
NEC |
| 321 |
RD150E-T4 |
500 mW constant-voltage diode |
NEC |
| 322 |
RD150E-TB |
500 mW constant-voltage diode |
NEC |
| 323 |
RD150EB |
0.5W DHD zener diode, 150V |
NEC |
| 324 |
RSD150N06 |
4V Drive Nch MOSFET |
ROHM |
| 325 |
RSD150N06FRA |
4V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 326 |
RSD150N06FRATL |
4V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 327 |
RSD150N06TL |
4V Drive Nch MOSFET |
ROHM |
| 328 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
| 329 |
SD1500BD |
600 V, 60 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 330 |
SD1500C04L |
400V 1600A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
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