| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BD160 |
Low frequency transistor |
mble |
| 302 |
BD160 |
Silicon n-p-n high power transistor |
Mullard |
| 303 |
BD1604MUV |
4-Channel Charge Pump White LED Driver with PWM Brightness Control |
ROHM |
| 304 |
BD1604MUV-E2 |
4-Channel Charge Pump White LED Driver with PWM Brightness Control |
ROHM |
| 305 |
BD162 |
Silicon HOMETAXIAL NPN, Power AF output amplifier |
SGS-ATES |
| 306 |
BD163 |
Silicon HOMETAXIAL NPN, Audio power amplifier |
SGS-ATES |
| 307 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 308 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 309 |
BD165 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
| 310 |
BD165 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 311 |
BD165 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 312 |
BD166 |
20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD165 |
Continental Device India Limited |
| 313 |
BD166 |
20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD165 |
Continental Device India Limited |
| 314 |
BD166 |
Plastic Medium Power Silicon PNP Transistor |
Motorola |
| 315 |
BD166 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 316 |
BD166 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 317 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 318 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 319 |
BD167 |
1.5A plastic 20W medium power silicon NPN transistor |
Motorola |
| 320 |
BD167 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 321 |
BD167 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 322 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
| 323 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
| 324 |
BD168 |
PNP silicon power transistor. 1.5 A, 60 V, 20 W. |
Motorola |
| 325 |
BD168 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 326 |
BD168 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 327 |
BD16805FV-M |
Built-in the Phase adjustment control and 180°energizing drive Three Phase Motor Predriver |
ROHM |
| 328 |
BD16805FV-ME2 |
Built-in the Phase adjustment control and 180°energizing drive Three Phase Motor Predriver |
ROHM |
| 329 |
BD169 |
20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD170 |
Continental Device India Limited |
| 330 |
BD169 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
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