No. |
Part Name |
Description |
Manufacturer |
301 |
AAY50 |
Germanium point contact mixing diode for the X-band |
VALVO |
302 |
AAY50R |
Germanium point contact mixing diode for the X-band |
VALVO |
303 |
AAY51 |
Germanium point contact mixing diode for the J-(Ku-)band |
VALVO |
304 |
AAY51R |
Germanium point contact mixing diode for the J-(Ku-)band |
VALVO |
305 |
AAY52 |
Germanium point contact mixing diode for the J-(Ku-)band |
VALVO |
306 |
AAY52R |
Germanium point contact mixing diode for the J-(Ku-)band |
VALVO |
307 |
AAY53 |
Germanium point-contact diode for cartridge fittings |
Siemens |
308 |
AAY54 |
Germanium point-contact diode for cartridge fittings |
Siemens |
309 |
AAY55 |
Germanium point-contact diode for cartridge fittings |
Siemens |
310 |
AAY56 |
Germanium point contact mixing diode for the S-band |
VALVO |
311 |
AAY56R |
Germanium point contact mixing diode for the S-band |
VALVO |
312 |
AB-119 |
A "GETTING STARTED" GUIDE FOR THE CONVERTERS: ADS1210, ADS1211, ADS1212, ADS1213, ADS1214, AND ADS1215 |
Burr Brown |
313 |
ADIS16000 |
Wireless Gateway Node for Remote Sensor |
Analog Devices |
314 |
ADM8693 |
�P Supervisor with Backup Battery Switchover, Watchdog Feature, Power Fail Warning, 4.4V Threshold Voltage, 100mA Output Current. Upgrade for ADM693 with Reduced Power Consumption and Faster Gating of Chip Enable Signals |
Analog Devices |
315 |
ADM8694 |
�P Supervisor with Backup Battery Switchover, Watchdog Feature, Power Fail Warning, 4.65V Threshold Voltage, Active Low Reset and 100mA Output Current. Upgrade for ADM692 with Reduced Power Consumption |
Analog Devices |
316 |
ADM8695 |
�P Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps. Upgrade for ADM695 |
Analog Devices |
317 |
ADM8697 |
�P Supervisor with Chip Enable Signals, Adjustable Low Line Voltage Monitor, Adjustable Watchdog Timer, Low Line, Power Fail and Watchdog Status Outputs, Reduced Power Consumption. Upgrade for ADM697 |
Analog Devices |
318 |
ADM8698 |
�P Supervisory Circuit with 4.65V Threshold Voltage, Low Supply Current and Active Low Reset Output. Upgrade for ADM698 |
Analog Devices |
319 |
ADM8699 |
�P Supervisory Circuit with Watchdog Feature, 4.65V Threshold Voltage, Low Supply Current and Active Low Reset Output. Upgrade for ADM699 |
Analog Devices |
320 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
321 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
322 |
AM29BDS320G |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
323 |
AM29BDS320G |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
324 |
AM29BDS323D |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
325 |
AM29BDS323DT11AWKI |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write/ Burst Mode Flash Memory |
Advanced Micro Devices |
326 |
AM29BDS640G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
327 |
AM29BDS640G |
64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
328 |
AM29BDS643D |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
329 |
AM29BDS643G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
330 |
AM29BL162C |
16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory |
Advanced Micro Devices |
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