| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N3813 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 302 |
2N3814 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 303 |
2N3815 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 304 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 305 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 306 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 307 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 308 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 309 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 310 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 311 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 312 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 313 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 314 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 315 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 316 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 317 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 318 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 319 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 320 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 321 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 322 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 323 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 324 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 325 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 326 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 327 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 328 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 329 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 330 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
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