No. |
Part Name |
Description |
Manufacturer |
301 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Infineon |
302 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Siemens |
303 |
FP410L(4X80)FM |
Double Differential Magneto Resistor |
Siemens |
304 |
FP410L(4X80)FME6797 |
Double Differential Magneto Resistor |
Infineon |
305 |
FP410L(4X80)FME8232 |
Double Differential Magneto Resistor |
Infineon |
306 |
FP420L90 |
Double Differential Magneto Resistor |
Siemens |
307 |
FP420L90B |
Double Differential Magneto Resistor |
Infineon |
308 |
FP420L90BE9113 |
Double Differential Magneto Resistor |
Infineon |
309 |
FP425L90E9112 |
Double Differential Magneto Resistor |
Infineon |
310 |
GS8170DD18C-250 |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
311 |
GS8170DD18C-250I |
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
312 |
GS8170DD18C-300 |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
313 |
GS8170DD18C-300I |
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
314 |
GS8170DD18C-333 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
315 |
GS8170DD18C-333I |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM |
GSI Technology |
316 |
GS8170DD36C-250 |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
317 |
GS8170DD36C-250I |
250MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
318 |
GS8170DD36C-300 |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
319 |
GS8170DD36C-300I |
300MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
320 |
GS8170DD36C-333 |
333MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
321 |
GS8170DD36C-333I |
333MHz 512K x 36 18MB double data rate sigmaRAM SRAM |
GSI Technology |
322 |
HBAT54 |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
323 |
HBAT54A |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
324 |
HBAT54C |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
325 |
HBAT54S |
Silicon Schottky Barrier Double Diodes |
Hi-Sincerity Microelectronics |
326 |
HYB18T1G160AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
327 |
HYB18T1G160AF-5 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
328 |
HYB18T1G400AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
329 |
HYB18T1G400AF-5 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
330 |
HYB18T1G800AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
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