Datasheets for E TRANSISTOR

Datasheets found :: 6039

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No.	Part Name	Description	Manufacturer
301	2N5551	NPN high-voltage transistors	Philips
302	2N5551C	High Voltage Transistor	Korea Electronics (KEC)
303	2N5551S	High Voltage Transistor	Korea Electronics (KEC)
304	2N5551SC	High Voltage Transistor	Korea Electronics (KEC)
305	2N5781	Silicon P-N-P epitaxial-base transistor. -80V, 10W.	General Electric Solid State
306	2N5782	Silicon P-N-P epitaxial-base transistor. -65V, 10W.	General Electric Solid State
307	2N5783	Silicon P-N-P epitaxial-base transistor. -45V, 10W.	General Electric Solid State
308	2N5784	Silicon N-P-N epitaxial-base transistor. 80V, 10W.	General Electric Solid State
309	2N5785	Silicon N-P-N epitaxial-base transistor. 65V, 10W.	General Electric Solid State
310	2N5786	Silicon N-P-N epitaxial-base transistor. 45V, 10W.	General Electric Solid State
311	2N5871	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
312	2N5871/1	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
313	2N5871/2	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
314	2N5872	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
315	2N5872A	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
316	2N5872B	PNP High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
317	2N5873	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
318	2N5873/1	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
319	2N5873/2	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
320	2N5874	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
321	2N5874A	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
322	2N5874B	NPN High Power Silicon General Purpose Epibase Transistor - metal case	IPRS Baneasa
323	2N5875	Epitaxial-base transistor for linear and switching applications	SGS-ATES
324	2N5876	Epitaxial-base transistor for linear and switching applications	SGS-ATES
325	2N5877	Epitaxial-base transistor for linear and switching applications	SGS-ATES
326	2N5878	Epitaxial-base transistor for linear and switching applications	SGS-ATES
327	2N5916	High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE	RCA Solid State
328	2N5917	High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE	RCA Solid State
329	2N5920	2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor	RCA Solid State
330	2N6080	RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS	Microsemi

Datasheets found :: 6039

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