| No. |
Part Name |
Description |
Manufacturer |
| 301 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 302 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 303 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 304 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 305 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 306 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 307 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 308 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 309 |
BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 310 |
BC327-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 311 |
BC328 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 312 |
BC328-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 313 |
BC328-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 314 |
BC328-40 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 315 |
BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 316 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 317 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 318 |
BC337-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 319 |
BC337-25 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 320 |
BC337-40 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 321 |
BC338 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 322 |
BC338-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 323 |
BC338-25 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 324 |
BC338-40 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 325 |
BC369 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 326 |
BC846AW |
NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
| 327 |
BC846BW |
NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
| 328 |
BC846W-BC850W |
NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
| 329 |
BC847AW |
NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Siemens |
| 330 |
BC847BLD |
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE |
Diodes |
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