| No. |
Part Name |
Description |
Manufacturer |
| 301 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 302 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 303 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 304 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 305 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 306 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 307 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 308 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 309 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 310 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 311 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 312 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 313 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 314 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 315 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 316 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 317 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 318 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 319 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 320 |
3N163 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 321 |
3N163 |
P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 322 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 323 |
3N163-4 |
P-CHANNEL ENHANCEMENT MODE |
Linear Systems |
| 324 |
3N164 |
P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch |
Calogic |
| 325 |
3N164 |
P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 326 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 327 |
3N165 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| 328 |
3N165 |
Monolithic Dual, P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 329 |
3N165-6 |
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
Linear Systems |
| 330 |
3N166 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
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