| No. |
Part Name |
Description |
Manufacturer |
| 301 |
AOWF412 |
Single MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
| 302 |
AUIRF4104 |
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 303 |
AUIRF4104S |
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 304 |
BD-F411RD |
Red , cathode, dual digit LED display |
Yellow Stone Corp |
| 305 |
BD-F412RD |
Green , cathode, dual digit LED display |
Yellow Stone Corp |
| 306 |
BD-F413RD |
Yellow , cathode, dual digit LED display |
Yellow Stone Corp |
| 307 |
BD-F414RD |
Hi-eff red/orange , cathode, dual digit LED display |
Yellow Stone Corp |
| 308 |
BD-F415RD |
Bright red , cathode, dual digit LED display |
Yellow Stone Corp |
| 309 |
BD-F415RE |
Bright red , cathode, dual digit LED display |
Yellow Stone Corp |
| 310 |
BD-F416RD |
Super red , cathode, dual digit LED display |
Yellow Stone Corp |
| 311 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 312 |
BF410A |
N-channel silicon field-effect transistors |
Philips |
| 313 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 314 |
BF410B |
N-channel silicon field-effect transistors |
Philips |
| 315 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 316 |
BF410C |
N-channel silicon field-effect transistors |
Philips |
| 317 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 318 |
BF410D |
N-channel silicon field-effect transistors |
Philips |
| 319 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 320 |
BF414 |
NPN Silicon RF Transistor |
Infineon |
| 321 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
| 322 |
BF414 |
RF transistor |
SGS-ATES |
| 323 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
| 324 |
BF414 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 325 |
BF415 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 326 |
BF416 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 327 |
BF419 |
NPN high-voltage transistor |
Philips |
| 328 |
BF41931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 329 |
BRF410 |
NPN low nnoise silicon microwave transistor. |
BOPOLARICS |
| 330 |
BUF410 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
| | | |
