No. |
Part Name |
Description |
Manufacturer |
301 |
ATS278PLAB |
3.5 to 20 V, two phase hall effect latch with FG output |
Anachip |
302 |
ATS278PLB |
3.5 to 20V, two phase hall effect latch with FG output |
Anachip |
303 |
ATS278Z-PL-A |
Two Phase Hall Effect Latch With FG Output |
Anachip |
304 |
ATS278Z-PL-B |
Two Phase Hall Effect Latch With FG Output |
Anachip |
305 |
B, H |
General Purpose, High Voltage, Radial Lug or Axial Lead, Supplied with a Mylar Heat-Shrink Protective Sleeve |
Vishay |
306 |
BA2107G |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
307 |
BA2107G-TR |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
308 |
BA2115F |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
309 |
BA2115F-E2 |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
310 |
BA2115FJ |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
311 |
BA2115FJ-GE2 |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
312 |
BA2115FVM |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
313 |
BA2115FVM-TR |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
314 |
BA4116FV |
Communications LSIs > RF signal processing of portables application > IF for radio communication |
ROHM |
315 |
BA4510F-E2 |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
316 |
BA4510FV-E2 |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
317 |
BA4510FVM |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
318 |
BA4510FVM-GTR |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
319 |
BA4510FVT |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
320 |
BA4510FVT-GE2 |
Low Noise Output Full Swing Operational Amplifier |
ROHM |
321 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
322 |
BAR63-02W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
323 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
324 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
325 |
BAR63-03W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
326 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
327 |
BAR63-04 |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
328 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
329 |
BAR63-04W |
PIN Diodes - PIN diode for high-speed switching of RF signals |
Infineon |
330 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
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