| No. |
Part Name |
Description |
Manufacturer |
| 301 |
MG300Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 302 |
MG300Q2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 303 |
MG300Q2YS61 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 304 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 305 |
MIG300J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 306 |
MIG300J2CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 307 |
MIG300Q101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 308 |
MIG300Q2CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 309 |
MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) |
Motorola |
| 310 |
NSPG300A |
120mW; 5V; 30mA nichia blue LED |
NICHIA CORPORATION |
| 311 |
PC755M8MG300LE |
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 300 MHz/150 L2 cache. |
Atmel |
| 312 |
PC755M8VG300LE |
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 300 MHz/150 L2 cache. |
Atmel |
| 313 |
PG300R |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes) |
Panjit International Inc |
| 314 |
PMEG2005AEV |
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV; Very low Vf MEGA Schottky barrier rectifiers |
Philips |
| 315 |
PMEG3001EEF |
30 V, 0.1 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 316 |
PMEG3002AEB |
Low VF MEGA Schottky barrier diode |
Nexperia |
| 317 |
PMEG3002AEB |
Low VF MEGA Schottky barrier diode |
NXP Semiconductors |
| 318 |
PMEG3002AEB |
Low VF MEGA Schottky barrier diode |
Philips |
| 319 |
PMEG3002AEL |
30 V, 0.2 A very low V_F MEGA Schottky barrier rectifier in leadless ultra small SOD882 package |
Nexperia |
| 320 |
PMEG3002AEL |
30 V, 0.2 A very low V_F MEGA Schottky barrier rectifier in leadless ultra small SOD882 package |
NXP Semiconductors |
| 321 |
PMEG3002AEL |
PMEG3002AEL; 30 V, 0.2 A very low Vf MEGA Schottky barrier rectifier in leadless ultra small SOD 882 package |
Philips |
| 322 |
PMEG3002AEL |
PMEG3002AEL; 30 V, 0.2 A very low Vf MEGA Schottky barrier rectifier in leadless ultra small SOD 882 package |
Philips |
| 323 |
PMEG3002AEL |
30 V, 0.2 A very low Vf MEGA Schottky barrier rectifier in leadless ultra small SOD 882 package |
Philips |
| 324 |
PMEG3002AELD |
30 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 325 |
PMEG3002AELD |
30 V, 0.2 A low V_F MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 326 |
PMEG3002AESF |
30 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 327 |
PMEG3002AESF |
30 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 328 |
PMEG3002EEF |
30 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 329 |
PMEG3002EJ |
200 mA low Vf MEGA Schottky barrier rectifier |
Nexperia |
| 330 |
PMEG3002EJ |
200 mA low Vf MEGA Schottky barrier rectifier |
NXP Semiconductors |
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