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Datasheets for GENERAL EL

Datasheets found :: 958
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 2N6703 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
302 2N6704 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
303 2N6751 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
304 2N6752 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
305 2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
306 2N6754 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
307 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
308 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
309 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
310 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
311 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
312 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
313 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
314 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
315 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
316 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
317 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
318 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
319 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
320 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
321 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
322 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State
323 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
324 2N685 25A silicon controlled rectifier. Vrsom 300V. General Electric Solid State
325 2N686 25A silicon controlled rectifier. Vrsom 350V. General Electric Solid State
326 2N687 25A silicon controlled rectifier. Vrsom 400V. General Electric Solid State
327 2N688 25A silicon controlled rectifier. Vrsom 500V. General Electric Solid State
328 2N689 25A silicon controlled rectifier. Vrsom 600V. General Electric Solid State
329 2N690 25A silicon controlled rectifier. Vrsom 720V. General Electric Solid State
330 2N691 25A silicon controlled rectifier. Vrsom 840V. General Electric Solid State


Datasheets found :: 958
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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