No. |
Part Name |
Description |
Manufacturer |
301 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
302 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
303 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
304 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
305 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
306 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
307 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
308 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
309 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
310 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
311 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
312 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
313 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
314 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
315 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
316 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
317 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
318 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
319 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
320 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
321 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
322 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
323 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
324 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
325 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
326 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
327 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
328 |
2N689 |
25A silicon controlled rectifier. Vrsom 600V. |
General Electric Solid State |
329 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
330 |
2N691 |
25A silicon controlled rectifier. Vrsom 840V. |
General Electric Solid State |
| | | |