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Datasheets for GH P

Datasheets found :: 37657
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No. Part Name Description Manufacturer
301 2N3055 Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers AEG-TELEFUNKEN
302 2N3055 Silicon n-p-n high power transistor Mullard
303 2N3055 High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. USHA India LTD
304 2N3055U Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
305 2N3055V Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
306 2N3442 High power industrial transistor Comset Semiconductors
307 2N3442 Silicon n-p-n high power transistor Mullard
308 2N3442 Silicon HOMETAXIAL NPN transistor, high power, high voltage switch SGS-ATES
309 2N3771 HIGH POWER NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
310 2N3771 Silicon n-p-n high power transistor Mullard
311 2N3771 HIGH POWER NPN SILICON TRANSISTOR SGS Thomson Microelectronics
312 2N3771 HIGH POWER NPN SILICON TRANSISTOR SGS Thomson Microelectronics
313 2N3771 Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
314 2N3771 HIGH POWER NPN SILICON TRANSISTOR ST Microelectronics
315 2N3771-D High Power NPN Silicon Power Transistors ON Semiconductor
316 2N3772 HIGH POWER NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
317 2N3772 Silicon n-p-n high power transistor Mullard
318 2N3772 HIGH POWER NPN SILICON TRANSISTOR SGS Thomson Microelectronics
319 2N3772 HIGH POWER NPN SILICON TRANSISTOR SGS Thomson Microelectronics
320 2N3772 Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
321 2N3772 HIGH POWER NPN SILICON TRANSISTOR ST Microelectronics
322 2N3773 High voltage, high power transistor. 160V, 150W. General Electric Solid State
323 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
324 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
325 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
326 2N3791 Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. General Electric Solid State
327 2N3792 Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. General Electric Solid State
328 2N3846 NPN Silicon High Power Transistor (over 25 watts) Transitron Electronic
329 2N3847 NPN Silicon High Power Transistor (over 25 watts) Transitron Electronic
330 2N3848 NPN Silicon High Power Transistor (over 25 watts) Transitron Electronic


Datasheets found :: 37657
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