| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SC5023 |
High frequency amplifier |
Hitachi Semiconductor |
| 302 |
2SC5025 |
High frequency amplifier |
Hitachi Semiconductor |
| 303 |
2SC503 |
Silicon NPN epitaxial high frequency high speed switching transistor |
TOSHIBA |
| 304 |
2SC504 |
Silicon NPN epitaxial high frequency high speed switching transistor |
TOSHIBA |
| 305 |
2SC507 |
Silicon NPN triple diffused high voltage high frequency transistor |
TOSHIBA |
| 306 |
2SC510 |
Silicon NPN triple diffused high frequency high voltage power transistor |
TOSHIBA |
| 307 |
2SC512 |
Silicon NPN triple diffused high frequency high voltage power transistor |
TOSHIBA |
| 308 |
2SC5120 |
High frequency amplifier |
Hitachi Semiconductor |
| 309 |
2SC518383R |
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 310 |
2SC522 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 311 |
2SC524 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 312 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 313 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 314 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 315 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
| 316 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 317 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 318 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 319 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 320 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 321 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 322 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 323 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 324 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 325 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 326 |
2SC5659T2L |
NPN High frequency Transistor |
ROHM |
| 327 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 328 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| 329 |
2SC594 |
Silicon NPN epitaxial high frequency transistor |
TOSHIBA |
| 330 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
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