| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SA1213 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 302 |
2SA1217 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 303 |
2SA1220 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 304 |
2SA1220A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 305 |
2SA1221 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 306 |
2SA1222 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 307 |
2SA1225 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 308 |
2SA1226 |
HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 309 |
2SA1241 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 310 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 311 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 312 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 313 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 314 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 315 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 316 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 317 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 318 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
| 319 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 320 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 321 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 322 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 323 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 324 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 325 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
| 326 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 327 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 328 |
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications |
TOSHIBA |
| 329 |
2SA1328 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 330 |
2SA1329 |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| | | |
