No. |
Part Name |
Description |
Manufacturer |
301 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
302 |
BCM91250E |
PCI Evaluation Board For BCM1250 |
Broadcom |
303 |
BD6726FU |
Quiet pre-driver (Speed control function by rotation speed feedback) |
ROHM |
304 |
BD6726FU-E2 |
Quiet pre-driver (Speed control function by rotation speed feedback) |
ROHM |
305 |
BF3506TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
SGS Thomson Microelectronics |
306 |
BF3506TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
ST Microelectronics |
307 |
BF3510TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
SGS Thomson Microelectronics |
308 |
BF3510TV |
FULL 50-60HZ RECTIFICATION BRIDGE |
ST Microelectronics |
309 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
310 |
BFG135A |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
311 |
BFG19 |
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |
Siemens |
312 |
BFG194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
313 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
314 |
BFG196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
315 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
316 |
BFG19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
317 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
318 |
BFG235 |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
319 |
BFP194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
Siemens |
320 |
BFP196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
321 |
BFP196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
322 |
BFP196W |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
323 |
BFP196W |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
324 |
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
325 |
BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
326 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
327 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
328 |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
329 |
BFQ19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
330 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
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