| No. |
Part Name |
Description |
Manufacturer |
| 301 |
K120 |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 302 |
K1200E70 |
silicon bilateral voltage triggered switch |
Teccor Electronics |
| 303 |
K1200G |
silicon bilateral voltage triggered switch |
Teccor Electronics |
| 304 |
K1200S |
silicon bilateral voltage triggered switch |
Teccor Electronics |
| 305 |
K1205 |
Protocol Tester |
Tektronix |
| 306 |
K120P |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 307 |
K1297 |
Protocol Tester |
Tektronix |
| 308 |
K9K1208D0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 309 |
K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 310 |
K9K1208U0A |
64M x 8 Bit NAND Flash Memory Data Sheet |
Samsung Electronic |
| 311 |
K9K1208U0A-VC(I)B0 |
64M x 8 Bit NAND Flash Memory Data Sheet |
Samsung Electronic |
| 312 |
K9K1208U0A-YCB0 |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 313 |
K9K1208U0A-YIB0 |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 314 |
K9K1208U0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 315 |
K9K1208U0M |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 316 |
K9K1208U0M-YCB0 |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 317 |
K9K1208U0M-YIB0 |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 318 |
K9K1216D0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 319 |
K9K1216Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 320 |
K9K1216U0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 321 |
KSK123 |
N0CHANNEL JUNCTION FET (AF IMPEDANCE CONVERTER) |
Samsung Electronic |
| 322 |
LDK120 |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 323 |
LDK120C-R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 324 |
LDK120C08R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 325 |
LDK120C10R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 326 |
LDK120C11R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 327 |
LDK120C12R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 328 |
LDK120C15R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 329 |
LDK120C18R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 330 |
LDK120C25R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
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