| No. |
Part Name |
Description |
Manufacturer |
| 301 |
1N781A |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 302 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 303 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 304 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 305 |
1N911 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 306 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 307 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 308 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 309 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 310 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 311 |
1N949 |
60 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 312 |
1N962B-1 |
11 V, 400 mW silicon zener diode |
BKC International Electronics |
| 313 |
1N963B-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 314 |
1N964B-1 |
13 V, 400 mW silicon zener diode |
BKC International Electronics |
| 315 |
1N965B-1 |
15 V, 400 mW silicon zener diode |
BKC International Electronics |
| 316 |
1N966B-1 |
16 V, 400 mW silicon zener diode |
BKC International Electronics |
| 317 |
1N967B-1 |
18 V, 400 mW silicon zener diode |
BKC International Electronics |
| 318 |
1N968B-1 |
20 V, 400 mW silicon zener diode |
BKC International Electronics |
| 319 |
1N969B-1 |
22 V, 400 mW silicon zener diode |
BKC International Electronics |
| 320 |
1N970B-1 |
24 V, 400 mW silicon zener diode |
BKC International Electronics |
| 321 |
1N971B-1 |
27 V, 400 mW silicon zener diode |
BKC International Electronics |
| 322 |
1N972B-1 |
30 V, 400 mW silicon zener diode |
BKC International Electronics |
| 323 |
1N973B-1 |
33 V, 400 mW silicon zener diode |
BKC International Electronics |
| 324 |
1N994 |
8 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 325 |
1N995 |
15 V, 250 mA, gold bonded diode |
BKC International Electronics |
| 326 |
1N996 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 327 |
24AA32A |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r |
Microchip |
| 328 |
24AA32A-I/MS |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ... |
Microchip |
| 329 |
24AA32A-I/MSG |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ... |
Microchip |
| 330 |
24AA32A-I/P |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ... |
Microchip |
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