No. |
Part Name |
Description |
Manufacturer |
301 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
302 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
303 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
304 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
305 |
2N6477 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
306 |
2N6478 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
307 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
308 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
309 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
310 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
311 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
312 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
313 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
314 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
315 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
316 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
317 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
318 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
319 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
320 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
321 |
2N6544 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
322 |
2N6545 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
323 |
2N6546 |
10A power-switching N-P-N transistor. |
General Electric Solid State |
324 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
325 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
326 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
327 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
328 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
329 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
330 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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