| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 302 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 303 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 304 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 305 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 306 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 307 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 308 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
| 309 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 310 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 311 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 312 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 313 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 314 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 315 |
2N5087 |
Small Signal Amplifier PNP |
ON Semiconductor |
| 316 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 317 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 318 |
2N5087RLRA |
Small Signal Amplifier PNP |
ON Semiconductor |
| 319 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 320 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 321 |
2N5088 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 322 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 323 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 324 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 325 |
2N5088RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 326 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 327 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 328 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 329 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 330 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| | | |
