| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 302 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 303 |
2N3734 |
Bipolar NPN Device in aHermetically sealed TO39 Metal Package |
SemeLAB |
| 304 |
2N3767 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 305 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 306 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 307 |
2N3821 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 308 |
2N3822 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 309 |
2N3823 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 310 |
2N3824 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 311 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 312 |
2N3918 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 313 |
2N3931 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 314 |
2N3966 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 315 |
2N4000 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 316 |
2N4001 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 317 |
2N4027 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 318 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 319 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 320 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 321 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 322 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 323 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 324 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 325 |
2N4091 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 326 |
2N4091A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 327 |
2N4092 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 328 |
2N4092A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 329 |
2N4093 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 330 |
2N4093A |
N channel field effect transistor (metal can) |
SESCOSEM |
| | | |
