| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
| 302 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 303 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 304 |
2N6487 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 305 |
2N6487 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 306 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 307 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 308 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 309 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 310 |
2N6546 |
MULTIEPITAXIAL MESA NPN |
SGS Thomson Microelectronics |
| 311 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 312 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 313 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 314 |
2N720A |
HIGH VOLTAGE GENERAL PURPOSE |
SGS Thomson Microelectronics |
| 315 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 316 |
2N930 |
TRANSISTOR |
SGS Thomson Microelectronics |
| 317 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 318 |
2SC2150 |
NPN silicon microwave transistor (This datasheet of NE57835 is also the datasheet of 2SC2150, see the Electrical Characteristics table) |
NEC |
| 319 |
2SC3604 |
Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X |
New Jersey Semiconductor |
| 320 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 321 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 322 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 323 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 324 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 325 |
308 |
Variable Compression Mica Padders |
Arco Electronics |
| 326 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 327 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 328 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 329 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 330 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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