| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N1490 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 302 |
2N1490 |
NPN Transistor |
Microsemi |
| 303 |
2N1490 |
Silicon NPN Transistor |
Motorola |
| 304 |
2N1490 |
Silicon NPN Power Transistor, TO-3 package |
Silicon Transistor Corporation |
| 305 |
2N1491 |
Silicon NPN Transistor |
Motorola |
| 306 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 307 |
2N1492 |
Silicon NPN Transistor |
Motorola |
| 308 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 309 |
2N1493 |
Silicon NPN Transistor |
Motorola |
| 310 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 311 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 312 |
2N1494 |
Germanium PNP Transistor |
Motorola |
| 313 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 314 |
2N1494A |
Germanium PNP Transistor |
Motorola |
| 315 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 316 |
2N1495 |
Germanium PNP Transistor |
Motorola |
| 317 |
2N1495A |
Germanium PNP Transistor |
Motorola |
| 318 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 319 |
2N1496 |
Germanium PNP Transistor |
Motorola |
| 320 |
2N1499 |
Germanium PNP Transistor |
Motorola |
| 321 |
2N1499A |
Germanium PNP Transistor |
Motorola |
| 322 |
2N1499A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 323 |
2N1499B |
Germanium PNP Transistor |
Motorola |
| 324 |
2N1499B |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 325 |
2N149A |
Germanium NPN Transistor |
Motorola |
| 326 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 327 |
3N140 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 328 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 329 |
3N140 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 330 |
3N140 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
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