| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2N3110 |
Silicon NPN Transistor |
Motorola |
| 302 |
2N3110 |
Trans GP BJT NPN 40V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 303 |
2N3110 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 304 |
2N3112 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 305 |
2N3113 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 306 |
2N3114 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 307 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 308 |
2N3114 |
Silicon NPN Transistor |
Motorola |
| 309 |
2N3114 |
NPN Silicon Transistor |
Texas Instruments |
| 310 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 311 |
2N3115 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 312 |
2N3115 |
NPN silicon annular Star transistor |
Motorola |
| 313 |
2N3115 |
Silicon NPN Transistor |
Motorola |
| 314 |
2N3115 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 315 |
2N3116 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 316 |
2N3116 |
NPN silicon annular Star transistor |
Motorola |
| 317 |
2N3116 |
Silicon NPN Transistor |
Motorola |
| 318 |
2N3116 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 319 |
2N3117 |
NPN Transistor General Purpose |
Amelco Semiconductor |
| 320 |
2N3117 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 321 |
2N3117 |
NPN low level low noise amplifier. |
Fairchild Semiconductor |
| 322 |
2N3117 |
Silicon NPN Transistor |
Motorola |
| 323 |
2N3117 |
Trans GP BJT NPN 60V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 324 |
2N3117 |
Low level amplifier transistor |
SGS-ATES |
| 325 |
2N3117 |
NPN Silicon Transistor |
Texas Instruments |
| 326 |
2N3118 |
Silicon NPN Transistor |
Motorola |
| 327 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 328 |
2N3119 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 329 |
2N3119 |
Silicon NPN Transistor |
Motorola |
| 330 |
2N3119 |
BJT |
New Jersey Semiconductor |
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