No. |
Part Name |
Description |
Manufacturer |
301 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
302 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
303 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
304 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
305 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
306 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
307 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
308 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
309 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
310 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
311 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
312 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
313 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
314 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
315 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
316 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
317 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
318 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
319 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
320 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
321 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
322 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
323 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
324 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
325 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
326 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
327 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
328 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
329 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
330 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
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