| No. |
Part Name |
Description |
Manufacturer |
| 301 |
LMZ31707RVQR |
SIMPLE SWITCHER? 2.95V to 17V, 7A Power Module with Current Sharing 42-B3QFN -40 to 85 |
Texas Instruments |
| 302 |
LMZ31707RVQT |
SIMPLE SWITCHER? 2.95V to 17V, 7A Power Module with Current Sharing 42-B3QFN -40 to 85 |
Texas Instruments |
| 303 |
LMZ31710RVQR |
SIMPLE SWITCHER? 2.95V to 17V, 10A Power Module with Current Sharing 42-B3QFN -40 to 85 |
Texas Instruments |
| 304 |
LMZ31710RVQT |
SIMPLE SWITCHER? 2.95V to 17V, 10A Power Module with Current Sharing 42-B3QFN -40 to 85 |
Texas Instruments |
| 305 |
M366F040(8)4DT1-C EDO MODE WITHOUT BUFFE |
4MB x 64 DRAM DIMM Using 4MB x 16, 4KB & 8KB Refresh 3.3V Data Sheet |
Samsung Electronic |
| 306 |
M372F0405DT0-C EDO MODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet |
Samsung Electronic |
| 307 |
M372F0805DT0-C EDO MODE |
8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V Data Sheet |
Samsung Electronic |
| 308 |
M372V0405DT0-C FAST PAGE MODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet |
Samsung Electronic |
| 309 |
M374F0405DT1-C EDO MODE WITHOUT BUFFER |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet |
Samsung Electronic |
| 310 |
M374F0805DT1-C EDO MODE |
8M x 72 DRAM DIMM with ECC Using 4M x 16 & 4M x 4, 4K Refresh, 3.3V Data Sheet |
Samsung Electronic |
| 311 |
M466F0404DT2-L EDO MODE |
4MB x 64 DRAM SODIMM Using 4MB x 16, 4KB Refresh 3.3V, Low power/Self-Refresh Data Sheet |
Samsung Electronic |
| 312 |
M466F0804DT1-L EDO MODE |
8M x 64 DRAM SODIMM Using 4M x 16, 4K Refresh, 3.3V, Low power/Self-Refresh Data Sheet |
Samsung Electronic |
| 313 |
MINI-14S-L |
DRAWING 415-0063 |
Z communications |
| 314 |
MMBV2101 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4G |
Motorola |
| 315 |
MMBV2102 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4Y |
Motorola |
| 316 |
MMBV2103 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4H |
Motorola |
| 317 |
MMBV2104 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4Z |
Motorola |
| 318 |
MMBV2105 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4U |
Motorola |
| 319 |
MMBV2106 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4V |
Motorola |
| 320 |
MMBV2107 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4W |
Motorola |
| 321 |
MMBV2108 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4X |
Motorola |
| 322 |
MMBV2109 |
Voltage-variable capacitance diode (VVC) 30V, SOT-23 package, SMD marking 4J |
Motorola |
| 323 |
MMBV432 |
Dual voltage-variable capacitance diode, SMD marking 4B, TO-236AB package |
Motorola |
| 324 |
MR2504 |
Diode Switching 400V 25A 2-Pin Case 193-04 Box |
New Jersey Semiconductor |
| 325 |
MSP430FR5848 |
MSP430FR5848 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 38-TSSOP -40 to 85 |
Texas Instruments |
| 326 |
MSP430FR5848IDA |
MSP430FR5848 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 38-TSSOP -40 to 85 |
Texas Instruments |
| 327 |
MSP430FR5848IDAR |
MSP430FR5848 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 38-TSSOP -40 to 85 |
Texas Instruments |
| 328 |
MSP430FR5848IRHAR |
MSP430FR5848 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 40-VQFN -40 to 85 |
Texas Instruments |
| 329 |
MSP430FR5848IRHAT |
MSP430FR5848 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 40-VQFN -40 to 85 |
Texas Instruments |
| 330 |
MSP430FR5858 |
MSP430FR5858 16 MHz Ultra-Low-Power Microcontroller featuring 48 KB FRAM, 2 KB SRAM, 33 IO 40-VQFN -40 to 85 |
Texas Instruments |
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